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| QSE773 PLASTIC SILICON PIN PHOTODIODE PACKAGE DIMENSIONS 0.215 (5.46) 0.199 (5.06) FEATURES * Daylight Filter * Sidelooker Package * Pin Photodiode * Wide Reception Angle, 120 * Chip Size = .1072 inches (2.712 mm) C L 0.126 (3.20) 0.110 (2.80) 0.311 (7.90) 0.288 (7.30) SENSING SURFACE 0.610 (15.49) MIN SCHEMATIC ANODE CATHODE ANODE 0.060 (1.52) 0.020 (0.51) SQ. (2x) 0.100 (2.54) 0.116 (2.95) 0.100 (2.54) NOTES: 1. Dimensions for all drawings are in inches (mm). 2. Tolerance of .010 (.25) on all non-nominal dimensions unless otherwise specified. 1. Derate power dissipation linearly 2.50 mW/C above 25C. 2. RMA flux is recommended. 3. Methanol or isopropyl alcohols are recommended as cleaning agents. 4. Soldering iron 1/16" (1.6mm) minimum from housing. 5. As long as leads are not under any stress or spring tension. 6. Light source is an GaAs LED which has a peak emission wavelength of 940 nm. 7. All measuements made under pulse conditions. ABSOLUTE MAXIMUM RATINGS Parameter Operating Temperature Storage Temperature Soldering Temperature (Iron)(2,3,4,5) Soldering Temperature (Flow)(2,3,5) Reverse Voltage Power Dissipation(1) (TA = 25C unless otherwise specified) Symbol TOPR TSTG TSOL-I TSOL-F VR PD Rating -40 to +85 -40 to +85 240 for 5 sec 260 for 10 sec 32 150 Unit C C C C V mW 1 of 4 100032C QSE773 PLASTIC SILICON PIN PHOTODIODE ELECTRICAL / OPTICAL CHARACTERISTICS PARAMETER TEST CONDITIONS (TA =25C unless otherwise specified) MIN TYP MAX UNITS SYMBOL Reverse Voltage Dark Reverse Current Peak Sensitivity Reception Angle @ 1/2 Power Photo Current Capacitance Rise Time Fall Time IR = 0.1 mA VR = 10 V VR = 5 V Ee = 1.0 mW/cm2, VCE = 5 V(6) VR = 3 V VR = 5 V, RL = 1 K VR = 5 V, RL = 1 K VR IR(D) !PK " IPH C tr tf 32 -- 920 +/-60 30 20 50 50 -- 30 V nA nm Degrees -- A pF ns ns TYPICAL PERFORMANCE CURVES 1.0 S (!)rel - RELATIVE SPECTRAL SENSITIVITY 120 Wavelength = 940 nm TA = 25C ISC - SHORT CIRCUIR CURRENT 800 900 1000 1100 0.8 100 80 0.6 60 0.4 40 0.2 20 0 700 0 0 !#- WAVELENGTH (nm) 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 Ee - IRRADIANCE (mW/cm2) Fig. 1 Relative Spectral Sensitivity vs. Wavelength Fig. 2 Short Circuit Current vs. Irradiance 2 of 4 100032C QSE773 PLASTIC SILICON PIN PHOTODIODE 100 f = 1 MHz E=0 1000 VR = 10 V E=0 IR - DARK CURRENT (nA) 0.1 1 VR - REVERSE VOLTAGE (V) 10 100 100 80 CAPACITANCE (pF) 60 40 10 20 0 0.01 1 0 10 20 30 40 50 60 70 80 90 100 TA -TEMPERATURE (C) Fig. 3 Capacitance vs. Reverse Voltage Fig. 4 Dark Current vs. Temperature 1200 E=0 IR -DARK CURRENT (pA) 1000 800 600 400 200 0 0 2 4 6 8 10 12 14 16 18 20 VR - REVERSE VOLTAGE (V) Fig. 5 Dark Current vs. Reverse Voltage 3 of 4 100032C QSE773 PLASTIC SILICON PIN PHOTODIODE DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. www.fairchildsemi.com (c) 2000 Fairchild Semiconductor Corporation 4 of 4 100032C |
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